Light emitting device

ABSTRACT

A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer adjacent the active layer. A first electrode is electrically coupled to the first conductive semiconductor layer, and a second electrode is electrically coupled to the second conductive semiconductor layer. A channel layer is provided at a peripheral portion of a lower portion of the light emitting structure, and a conductive support member is provided adjacent to the second electrode. A first connection part is electrically coupled to the first electrode and the conductive support member, and a second connection part is electrically coupled to the second electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. 119 to KoreanPatent Application No. 10-2012-0090679 filed on Aug. 20, 2012, andKorean Patent Application No. 10-2012-0096911 filed on Sep. 3, 2012,which are hereby incorporated by reference in theirs entirety.

BACKGROUND

The embodiment relates to a light emitting device, a light emittingdevice package, and a light unit.

A light emitting diode (LED) has been extensively used as one of lightemitting devices. The LED converts electrical signals into the form oflight such as infra-red light, ultra-violet light, and visible light byusing the characteristic of a compound semiconductor.

As the light efficiency of the light emitting device is increased, theLED has been used in various fields such as display apparatuses andlighting appliances.

The above references are incorporated by reference herein whereappropriate for appropriate teachings of additional or alternativedetails, features and/or technical background.

SUMMARY

The embodiment provides a light emitting device capable of preventingcurrent concentration, and improving light efficiency and electricalreliability, a light emitting device package, and a light unit.

According to the embodiment, there is provided a light emitting devicecomprising a light emitting structure comprising a first conductivesemiconductor layer, an active layer under the first conductivesemiconductor layer, and a second conductive semiconductor layer underthe active layer, a first electrode electrically connected to the firstconductive semiconductor layer, a second electrode electricallyconnected to the second conductive semiconductor layer, a channel layerat a peripheral portion of a lower portion of the light emittingstructure, a conductive support member under the second electrode, afirst connection part electrically connected to the first electrode andthe conductive support member, and a second connection part electricallyconnected to the second electrode.

According to the embodiment, there is provided a light emitting devicecomprising a light emitting structure comprising a first conductivesemiconductor layer, an active layer under the first conductivesemiconductor layer, and a second conductive semiconductor layer underthe active layer, a first electrode electrically connected to the firstconductive semiconductor layer, a second electrode electricallyconnected to the second conductive semiconductor layer, a channel layerat a peripheral portion of a lower portion of the light emittingstructure, a conductive support member under the second electrode, afirst connection part electrically connected to the first electrode andthe conductive support member, and a second connection part electricallyconnected to the second electrode. The first connection part makescontact with a lateral side of the first conductive semiconductor layer,and the channel layer surrounds the active layer.

According to the embodiment, there is provided a light emitting devicecomprising a light emitting structure comprising a first conductivesemiconductor layer, an active layer under the first conductivesemiconductor layer, and a second conductive semiconductor layer underthe active layer, a first electrode electrically connected to the firstconductive semiconductor layer, a second electrode electricallyconnected to the second conductive semiconductor layer, a channel layerat a peripheral portion of a lower portion of the light emittingstructure, a conductive support member under the second electrode, afirst connection part electrically connected to the first electrode andthe conductive support member, and a second connection part electricallyconnected to the second electrode. One end of the second connection partis spaced apart from a sidewall of the light emitting structure, andexposed to a lateral side of the light emitting structure, and a topsurface of the channel layer is disposed higher than a top surface ofthe active layer.

As described above, the embodiment provides a light emitting devicecapable of preventing current concentration, and improving lightefficiency and electrical reliability, a light emitting device package,and a light unit.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments will be described in detail with reference to thefollowing drawings in which like reference numerals refer to likeelements wherein:

FIG. 1 is a view showing a light emitting device according to theembodiment;

FIGS. 2 to 6 are sectional views showing a method of fabricating a lightemitting device.

FIGS. 7 to 11 are sectional views showing modifications of the lightemitting device according to the embodiment.

FIG. 12 is a sectional view showing another example of the lightemitting device according to the embodiment.

FIG. 13 is a view showing an example of a second connection part of thelight emitting device of the embodiment.

FIGS. 14 to 18 are sectional views showing a method of fabricating alight emitting device according to the embodiment.

FIGS. 18 to 21 are sectional views showing modifications of the lightemitting device according to the embodiment.

FIG. 22 is a view showing a light emitting device package according tothe embodiment.

FIG. 23 is a view showing a display device according to the embodiment.

FIG. 24 is a view showing another example of the display deviceaccording to the embodiment.

FIG. 25 is a view showing a light unit according to the embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the description of the embodiments, it will be understood that, whena layer (or film), a region, a pattern, or a structure is referred to asbeing “on” or “under” another substrate, another layer (or film),another region, another pad, or another pattern, it can be “directly” or“indirectly” over the other substrate, layer (or film), region, pad, orpattern, or one or more intervening layers may also be present. Such aposition of the layer has been described with reference to the drawings.

The thickness and size of each layer shown in the drawings may beexaggerated, omitted or schematically drawn for the purpose ofconvenience or clarity. In addition, the size of elements does notutterly reflect an actual size.

Hereinafter, a light emitting device, a light emitting device package, alight unit, and a method for fabricating the same according to theembodiments will be described in detail with reference to accompanyingdrawings.

FIG. 1 is a view showing a light emitting device according to theembodiment.

As shown in FIG. 1, the light emitting device according to theembodiment may comprise a light emitting structure 10, a conductivesupport member 70, a first electrode 80, and a second electrode 87.

The light emitting structure 10 may comprise a first conductivesemiconductor layer 11, an active layer 12, and a second conductivesemiconductor layer 13. The active layer 12 may be disposed between thefirst conductive semiconductor layer 11 and the second conductivesemiconductor layer 13. The active layer 12 may be disposed under thefirst conductive semiconductor layer 11, and the second conductivesemiconductor layer 13 may be disposed under the active layer 12.

The first conductive semiconductor layer 11 may comprise an N-typesemiconductor layer doped with N-type dopants serving as firstconductive dopants, and the second conductive semiconductor layer 13 maycomprise a P-type semiconductor layer doped with P-type dopants servingas second conductive dopants. In addition, the first conductivesemiconductor layer 11 may comprise a P-type semiconductor layer, andthe second conductive semiconductor layer 13 may comprise an N-typesemiconductor layer.

For example, the first conductive semiconductor layer 11 may comprise anN-type semiconductor layer. The first conductive semiconductor layer 11may be realized by using a compound semiconductor. The first conductivesemiconductor layer 11 may be realized by using a group II-VI compoundsemiconductor, or a group III-V compound semiconductor.

For example, the first conductive semiconductor layer 11 may be realizedby using a semiconductor material having a compositional formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, the firstconductive semiconductor layer 11 may comprise one selected from thegroup consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs,GaP, GaAs, GaAsP, and AlGaInP doped with N-type dopants such as Si, Ge,Sn, Se, and Te.

The active layer 12 emits light having a wavelength corresponding to theenergy band gap difference according to materials constituting theactive layer 13 through the combination of electrons (or holes) injectedthrough the first conductive semiconductor layer 11 and holes (orelectrons) injected through the second conductive semiconductor layer13. The active layer 12 may have one of a single quantum well (SQW)structure, a multi-quantum well (MQW) structure, a quantum dotstructure, and a quantum wire structure, but the embodiment is notlimited thereto.

For example, the active layer 12 may be realized by using a compoundsemiconductor. The active layer 12 may be realized by using asemiconductor material having a compositional formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). When the active layer12 has an MQW structure, the active layer 12 may be formed by stacking aplurality of well layers and a plurality of barrier layers. For example,the active layer 12 may have a cycle of InGaN well layer/GaN barrierlayer.

For example, the second conductive semiconductor layer 13 may comprise aP-type semiconductor layer. The second conductive semiconductor layer 13may be realized by using a compound semiconductor. For example, thesecond conductive semiconductor layer 13 may be realized by using agroup II-VI compound semiconductor, or a group II-V compoundsemiconductor.

For example, the second conductive semiconductor layer 13 may berealized by using a semiconductor material having a compositionalformula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example,the second conductive semiconductor layer 13 may comprise one selectedfrom the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP doped with P-type dopantssuch as Mg, Zn, Ca, Sr, and Ba.

Meanwhile, the first conductive semiconductor layer 11 may comprise aP-type semiconductor layer and the second conductive semiconductor layer13 may comprise the N-type semiconductor layer. In addition, asemiconductor layer comprising an N-type or P-type semiconductor layermay be additionally disposed under the second conductive semiconductorlayer 13. Accordingly, the light emitting structure 10 may have at leastone of an NP junction structure, a PN junction structure, an NPNjunction structure, or a PNP junction structure. In addition, impuritiesmay be doped into the first conductive semiconductor layer 11 and thesecond conductive semiconductor layer 13 with uniform or non-uniformdoping concentration. In other words, the light emitting structure 10may have various structures, but the embodiment is not limited thereto.

In addition, a first conductive InGaN/GaN superlattice structure orInGaN/InGaN superlattice structure may be formed between the firstconductive semiconductor layer 11 and the active layer 12. In addition,a second conductive AlGaN layer may be formed between the secondconductive semiconductor layer 13 and the active layer 13.

The light emitting device according to the embodiment may comprise achannel layer 30 disposed at a peripheral portion of a lower portion ofthe light emitting structure 10. For example, a top surface of thechannel layer 30 may be disposed higher than a top surface of the activelayer 12. The channel layer 30 may surround the active layer 12. Thechannel layer 30 may surround a peripheral portion of the secondconductive semiconductor layer 13. One end of the channel layer 30 maybe disposed under the second conductive semiconductor layer 13. The oneend of the channel layer 30 may make contact with a bottom surface ofthe second conductive semiconductor layer 13. The one end of the channellayer 30 may be disposed between the second conductive semiconductorlayer 13 and the second electrode 87. The one end of the channel layer30 may be disposed between the second conductive semiconductor layer 13and a reflective layer 17.

For example, the channel layer 30 may be realized by using an oxide or anitride. For example, the channel layer 30 may comprise at least oneselected from the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄,Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN. The channel layer 30may be referred to as an isolation layer. The channel layer 30 may serveas an etching stopper when an isolation process is performed withrespect to the light emitting structure 10 thereafter. In addition,through the isolation process, the electrical characteristic of thelight emitting device can be prevented from being degraded.

The first electrode 80 may be electrically connected to the firstconductive semiconductor layer 11. The first electrode 80 may bedisposed on the first conductive semiconductor layer 11. The firstelectrode 80 may make contact with the first conductive semiconductorlayer 11. The reflective layer 17 may be electrically connected to thesecond conductive semiconductor layer 13. The reflective layer 17 may bedisposed under the light emitting structure 10. The reflective layer 17may be disposed under the second conductive semiconductor layer 13.

The light emitting device according to the embodiment may comprise anohmic contact layer 15 disposed between the reflective layer 17 and thesecond conductive semiconductor layer 13. The ohmic contact layer 15 maycontact with the second conductive semiconductor layer 13.

The ohmic contact layer 15 may make ohmic contact with the lightemitting structure 10. The ohmic contact layer 15 may comprise an ohmiccontact region with the light emitting structure 10. The reflectivelayer 17 may be electrically connected to the second conductivesemiconductor layer 13. In addition, the reflective layer 17 reflectslight incident thereto from the light emitting structure 10 to increasethe quantity of light extracted to an outside.

For example, the ohmic contact layer 15 may comprise a transparentconductive oxide layer. For example, the ohmic contact layer 15 maycomprise at least one selected from the group consisting of an ITO(Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum ZincOxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc TinOxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium GalliumZinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony TinOxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx,RuOx, NiO, Pt, Ag, and Ti.

The reflective layer 17 may comprise a material having high reflectance.For example, the reflective layer 17 may comprise metal comprising atleast one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, andthe alloy thereof. In addition, the reflective layer 17 may be formed ina multi-layer of the metal or the alloy thereof and a transmissiveconductive material such as an ITO (Indium-Tin-Oxide), an IZO(Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO(Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), anIGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO(Antimony-Tin-Oxide). For example, according to the embodiment, thereflective layer 17 may comprise at least one of Ag, Al, an Ag—Pd—Cualloy, and an Ag—Cu alloy.

For example, the reflective layer 17 may have a structure in which an Aglayer and a Ni layer are alternately formed, and may comprise Ni/Ag/Nior a TI layer, and a Pt layer. In addition, the ohmic contact layer 15may be disposed under the reflective layer 17, and at least a portion ofthe ohmic contact layer 15 may make ohmic contact with the lightemitting structure 10 through the reflective layer 17.

The light emitting device according to the embodiment may comprise afirst metal layer 35 disposed under the reflective layer 17. The firstmetal layer 35 may comprise at least one of Au, Cu, Ni, Ti, Ti—W, Cr, W,Pt, V, Fe, and Mo.

According to the embodiment, the second electrode 87 may comprise atleast one of the reflective layer 17, the ohmic contact layer 15, andthe first metal layer 35. For example, the second electrode 87 maycomprise all of the reflective layer 17, the first metal layer 35, andthe ohmic contact layer 15, or may comprise one or two selected from theof the reflective layer 17, the first metal layer 35, and the ohmiccontact layer 15.

The light emitting device according to the embodiment may comprise asecond metal layer 50 disposed under the first metal layer 35.

The second metal layer 50 may comprise at least one of Cu, Ni, Ti, Ti—W,Cr, W, Pt, V, Fe, and Mo. The second metal layer 50 may serve as adiffusion barrier layer. A bonding layer 60 and the conductive supportmember 70 may be disposed under the second metal layer 50.

The second metal layer 50 may prevent a material included in the bondinglayer 60 from being diffused to the reflective layer 17 in the processof providing the bonding layer 60. The second metal layer 50 may preventa material, such as zinc (Sn), included in the bonding layer 60 fromexerting an influence on the reflective layer 17.

The bonding layer 60 comprises barrier metal or bonding metal. Forexample, the bonding layer 60 may comprise at least one of Ti, Au, Sn,Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta. The conductive support member70 may support the light emitting structure 10 according to theembodiment while performing a heat radiation function. The bonding layer60 may be realized in the form of a seed layer.

The conductive support member 70 may comprise at least one ofsemiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGesubstrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu—W, orimpurities.

According to the embodiment, power may be applied to the light emittingstructure 10 through the second electrode 87 and the first electrode 80.According to the embodiment, the first electrode 80 may comprise anohmic layer, an intermediate layer, and an upper layer. The ohmic layermay comprise a material selected from the group consisting of Cr, V, W,Ti, and Zn, and may make ohmic contact. The intermediate layer may berealized by using a material selected from the group consisting of Ni,Cu, and Al. For example, the upper layer may comprise Au. The firstelectrode 80 may comprise at least one selected from the groupconsisting of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

A roughness 85 may be formed on the top surface of the first conductivesemiconductor layer 11. Accordingly, the quantity of light extractedupward at the region where the roughness 85 is formed can be increased.

The light emitting device according to the embodiment may comprise aninsulating layer 40 disposed between the first metal layer 35 and thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the second metal layer 50. The insulating layer 40may insulate the first metal layer 35 from the conductive support member70. For example, the insulating layer 40 may be realized by using anoxide or a nitride. For example, the insulating layer 40 may comprise atleast one selected from the group consisting of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The top surface of theinsulating layer 40 may be exposed to a peripheral portion of the lowerportion of the light emitting structure 10. The insulating layer 40 maysurround a peripheral portion of the channel layer 30.

The light emitting device according to the embodiment may comprise afirst connection part 90 and a second connection part 95. The firstconnection part 90 may be electrically connected to the first electrode80 and the conductive support member 70. The second connection part 95may be electrically connected to the reflective layer 17. The secondconnection part 95 may electrically connected to the second electrode87.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60.

The first connection part 90 may be disposed through the insulatinglayer 40. The first connection part 90 may be electrically connected tothe conductive support member 70 through the insulating layer 40. Inaddition, the first connection part 90 may be electrically connected tothe second metal layer 50 through the channel layer 30. The firstconnection part 90 may be electrically connected to the second metallayer 50 through the channel layer 30 and the insulating layer 40.

The first connection part 90 may be disposed at a lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at a lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm.

The second connection part 95 may be electrically connected to the firstmetal layer 35. The second connection part 95 may make contact with thefirst metal layer 35. One end of the second connection part 95 may bedisposed on the channel layer 30. The one end of the second connectionpart 95 may be spaced apart from the lateral side of the light emittingstructure 10. The one end of the second connection part 95 may beexposed to the lateral side of the light emitting structure 10.

The second connection part 95 may be electrically connected to the firstmetal layer 35 through the channel layer 30. In addition, the secondconnection part 95 may be electrically connected to the first metallayer 35 through the insulating layer 40. The second connection part 95may be electrically connected to the second electrode 87. The secondconnection part 95 may make contact with the second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

Hereinafter, a method of fabricating the light emitting device accordingto the embodiment will be described with reference to FIGS. 2 to 6.

According to the method of fabricating the light emitting device of theembodiment, as shown in FIG. 2, the first conductive semiconductor layer11, the active layer 12, and the second conductive semiconductor layer13 may be formed on a substrate 5. The first conductive semiconductorlayer 11, the active layer 12, and the second conductive semiconductorlayer 13 may be defined as the light emitting structure 10.

For example, the substrate 5 may comprise at least one of a sapphiresubstrate (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but theembodiment is not limited thereto. A buffer layer may be disposedbetween the first conductive semiconductor layer 11 and the substrate 5.

The first conductive semiconductor layer 11 may comprise an N-typesemiconductor layer doped with N-type dopants serving as firstconductive dopants, and the second conductive semiconductor layer 13 maycomprise a P-type semiconductor layer doped with P-type dopants servingas second conductive dopants. In addition, the first conductivesemiconductor layer 11 may comprise a P-type semiconductor layer, andthe second conductive semiconductor layer 13 may comprise an N-typesemiconductor layer.

For example, the first conductive semiconductor layer 11 may comprise anN-type semiconductor. The first conductive semiconductor layer 11 maycomprise a semiconductor material having a compositional formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, the firstconductive semiconductor layer 11 may comprise one selected from thegroup consisting of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN, andmay be doped with N-type dopants such as Si, Ge, Sn, Se, and Te.

The active layer 12 emits light having a wavelength corresponding to theenergy band gap difference according to materials constituting theactive layer 13 through the combination of electrons (or holes) injectedthrough the first conductive semiconductor layer 11 and holes (orelectrons) injected through the second conductive semiconductor layer13. The active layer 12 may have one of a single quantum well (SQW)structure, a multi-quantum well (MQW) structure, a quantum dotstructure, and a quantum wire structure, but the embodiment is notlimited thereto.

The active layer 12 may be realized by using a semiconductor materialhaving a compositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). When the active layer 12 has an MQW structure, the activelayer 12 may be formed by stacking a plurality of well layers and aplurality of barrier layers. For example, the active layer 12 may have acycle of InGaN well layer/GaN barrier layer.

For example, the second conductive semiconductor layer 13 may berealized by using a P type semiconductor. The second conductivesemiconductor layer 13 may be realized by using a semiconductor materialhaving a compositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). For example, the second conductive semiconductor layer 13 maycomprise one selected from the group consisting of InAlGaN, GaN, AlGaN,InGaN, AlInN, AlN, and InN, and may be doped with P-type dopants such asMg, Zn, Ca, Sr, and Ba.

Meanwhile, the first conductive semiconductor layer 11 may comprise aP-type semiconductor layer and the second conductive semiconductor layer13 may comprise the N-type semiconductor layer. In addition, asemiconductor layer comprising an N-type or P-type semiconductor layermay be additionally disposed on the second conductive semiconductorlayer 13. Accordingly, the light emitting structure 10 may have at leastone of an NP junction structure, a PN junction structure, an NPNjunction structure, or a PNP junction structure. In addition, impuritiesmay be doped into the first conductive semiconductor layer 11 and thesecond conductive semiconductor layer 15 with uniform or non-uniformdoping concentration. In other words, the light emitting structure 10may have various structures, but the embodiment is not limited thereto.

In addition, the first conductive InGaN/GaN superlattice structure orInGaN/InGaN superlattice structure may be formed between the firstconductive semiconductor layer 11 and the active layer 12. In addition,a second conductive AlGaN layer may be formed between the secondconductive semiconductor layer 13 and the active layer 13.

Next, as shown in FIG. 3, a portion of the first conductivesemiconductor layer 11 may be exposed by performing an etching schemefor the light emitting structure 10. In this case, the etching maycomprise a wet etching scheme or a dry etching scheme.

Next, as shown in FIG. 4, the light emitting structure 10 may bedisposed therein with the channel layer 30, the ohmic contact layer 15,and the reflective layer 17.

For example, the channel layer 30 may comprise at least one selectedfrom the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y),SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The ohmic contact layer 15 may be disposed between the reflective layer17 and the second conductive semiconductor layer 13. The ohmic contactlayer 15 may make contact with the second conductive semiconductor layer13.

The ohmic contact layer 15 may make contact with the light emittingstructure 10. The reflective layer 17 may be electrically connected tothe second conductive semiconductor layer 13. The ohmic contact layer 15may comprise an ohmic-contact region with the light emitting structure10.

For example, the ohmic contact layer 15 may comprise a transparentconductive oxide layer. For example, the ohmic contact layer 15 maycomprise at least one selected from the group consisting of an ITO(Indium Tin Oxide), an IZO (Indium Zinc Oxide), an AZO (Aluminum ZincOxide), an AGZO (Aluminum Gallium Zinc Oxide), an IZTO (Indium Zinc TinOxide), an IAZO (Indium Aluminum Zinc Oxide), an IGZO (Indium GalliumZinc Oxide), an IGTO (Indium Gallium Tin Oxide), an ATO (Antimony TinOxide), a GZO (Gallium Zinc Oxide), an IZON (IZO Nitride), ZnO, IrOx,RuOx, NiO, Pt, Ag, and Ti.

The reflective layer 17 may comprise a material having high reflectance.For example, the reflective layer 17 may comprise metal comprising atleast one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, andthe alloy thereof. In addition, the reflective layer 17 may be formed ina multi-layer of the metal or the alloy thereof and a transmissiveconductive material such as an ITO (Indium-Tin-Oxide), an IZO(Indium-Zinc-Oxide), an IZTO (Indium-Zinc-Tin-Oxide), an IAZO(Indium-Aluminum-Zinc-Oxide), an IGZO (Indium-Gallium-Zinc-Oxide), anIGTO (Indium-Gallium-Tin-Oxide), an AZO (Aluminum-Zinc-Oxide), or an ATO(Antimony-Tin-Oxide). For example, according to the embodiment, thereflective layer 17 may comprise at least one of Ag, Al, an Ag—Pd—Cualloy, and an Ag—Cu alloy.

For example, the reflective layer 17 may have a structure in which an Aglayer and a Ni layer are alternately formed, and may comprise Ni/Ag/Nior a TI layer, and a Pt layer. In addition, the ohmic contact layer 15may be disposed under the reflective layer 17, and at least a portion ofthe ohmic contact layer 15 may make ohmic contact with the lightemitting structure 10 through the reflective layer 17.

Thereafter, as shown in FIG. 5, the first metal layer 35, the insulatinglayer 40, the second metal layer 50, the bonding layer 60, and theconductive support member 70 may be formed on the reflective layer 17.

The first metal layer 35 may comprise at least one selected from thegroup consisting of Au, Cu, Ni, Ti, Ti—W, Cr, W, Pt, V, Fe, and Mo.

According to the embodiment, the second electrode 87 may comprise atleast one of the reflective layer 17, the ohmic contact layer 15, andthe first metal layer 35.

The insulating layer 40 may insulate the first metal layer 35 from thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the conductive support member 70.

The insulating layer 40 may be realized by using an oxide or a nitride.For example, the insulating layer 40 may comprise at least one selectedfrom the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y),SiO_(x)N_(y), Al₂O₃, TiO₂, and MN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The insulating layer40 may surround a peripheral portion of the channel layer 30.

The second metal layer 50 may comprise at least one of Cu, Ni, Ti, Ti—W,Cr, W, Pt, V, Fe, and Mo. The second metal layer 50 may serve as adiffusion barrier layer.

The second metal layer 50 may prevent a material included in the bondinglayer 60 from being diffused to the reflective layer 17 in the processof providing the bonding layer 60. The second metal layer 50 may preventa material, such as zinc (Sn), included in the bonding layer 60 fromexerting an influence on the reflective layer 17.

The bonding layer 60 comprises barrier metal or bonding metal. Forexample, the bonding layer 60 may comprise at least one of Ti, Au, Sn,Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta. The conductive support member70 may support the light emitting structure 10 according to theembodiment while performing a heat radiation function. The bonding layer60 may be realized in the form of a seed layer.

The conductive support member 70 may comprise at least one ofsemiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGesubstrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu—W, orimpurities.

Next, the substrate 5 is removed from the first conductive semiconductorlayer 11. According to one example, the substrate 5 may be removedthrough a laser lift off (LLO) process. The LLO process is a process tolaminate the substrate 5 from the first conductive semiconductor layer11 by irradiating a laser to the bottom surface of the substrate 5.

In addition, as shown in FIG. 6, the lateral side of the light emittingstructure 10 is etched through an isolation etching process to expose aportion of the channel layer 30. In this case, a portion of theinsulating layer 40 may be exposed. The isolation etching process may beperformed through a dry etching process such as an inductively coupledplasma (ICP), but the embodiment is not limited thereto.

The roughness 85 may be formed on the top surface of the firstconductive semiconductor layer 11. Accordingly, a light extractionpattern may be disposed on the light emitting structure 10. Aconcave-convex pattern may be disposed on the light emitting structure10. For example, the light extraction pattern provided on the lightemitting structure 10 may be formed through a PEC (photo electrochemical) etching process. Therefore, according to the embodiment, theexternal light extraction effect can be increased.

Next, as shown in FIG. 6, the light emitting structure 10 may bedisposed thereon with the first electrode 80, the first connection part90, and the second connection part 95.

The first electrode 80 may be electrically connected to the firstconductive semiconductor layer 11. A portion of the first electrode 80may make contact with the first conductive semiconductor layer 11.According to the embodiment, power may be applied to the light emittingstructure 10 through the first electrode 80 and the second electrode 87.

The first electrode 80 may comprise an ohmic layer, an intermediatelayer, and an upper layer. The ohmic layer may comprise a materialselected from the group consisting of Cr, V, W, Ti, and Zn, and may makeohmic contact. The intermediate layer may be realized by using amaterial selected from the group consisting of Ni, Cu, and Al. Forexample, the upper layer may comprise Au. The first electrode 80 maycomprise at least one selected from the group consisting of Cr, V, W,Ti, Zn, Ni, Cu, Al, and Au.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60. The first connectionpart 90 may be disposed through the insulating layer 40. The firstconnection part 90 may be electrically connected to the conductivesupport member 70 through the insulating layer 40. The first connectionpart 90 may be electrically connected to the second metal layer 50through the channel layer 30.

The first connection part 90 may be disposed at the lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at the lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm.

The second connection part 95 may be electrically connected to the firstmetal layer 35. The second connection part 95 may make contact with thefirst metal layer 35. One end of the second connection part 95 may bedisposed on the channel layer 30. The one end of the second connectionpart 95 may be spaced apart from the sidewall of the light emittingstructure 10. The one end of the second connection part 95 may beexposed to the lateral side of the light emitting structure 10. Thesecond connection part 95 may electrically connected to the first metallayer 35 through the channel layer 30. In addition, the secondconnection part 95 may be electrically connected to the first metallayer 35 through the insulating layer 40.

The second connection part 95 may be electrically connected to thesecond electrode 87. The second connection part 95 may make contact withthe second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

Meanwhile, the process of forming each layer described above is providedfor the illustrative purpose, and the process sequence thereof may bevariously modified.

FIG. 7 is a sectional view showing another example of a light emittingdevice according to the embodiment. In the following description aboutthe light emitting device shown in FIG. 7, components and structures thesame as those described with reference to FIG. 1 will not be furtherdescribed in order to avoid redundancy.

According to the embodiment shown in FIG. 7, the channel layer 30 isdisposed at the peripheral portion of the lower portion of the lightemitting structure 10, and the insulating layer 40 may not be exposed tothe peripheral portion of the lower portion of the light emittingstructure 10.

The light emitting device according to the embodiment may comprise thechannel layer 30 disposed at the peripheral portion of the lower portionof the light emitting structure 10. For example, the top surface thechannel layer 30 may be disposed higher than the top surface of theactive layer 12. The channel layer 30 may surround the active layer 12.The channel layer 30 may surround a peripheral portion of the secondconductive semiconductor layer 13. One end of the channel layer 30 maybe disposed under the second conductive semiconductor layer 13. The oneend of the channel layer 30 may make contact with a bottom surface ofthe second conductive semiconductor layer 13. The one end of the channellayer 30 may be disposed between the second conductive semiconductorlayer 13 and a reflective layer 17.

For example, the channel layer 30 may be realized by using an oxide or anitride. For example, the channel layer 30 may comprise at least oneselected from the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄,Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN. The channel layer 30may be referred to as an isolation layer. The channel layer 30 may serveas an etching stopper when an isolation process is performed withrespect to the light emitting structure 10 thereafter. In addition,through the isolation process, the electrical characteristic of thelight emitting device can be prevented from being degraded.

The light emitting device according to the embodiment may comprise theinsulating layer 40 disposed between the first metal layer 35 and thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the second metal layer 50. The insulating layer 40may insulate the first metal layer 35 from the conductive support member70. For example, the insulating layer 40 may be realized by using anoxide or a nitride. For example, the insulating layer 40 may comprise atleast one selected from the group consisting of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The insulating layer40 may surround a peripheral portion of the channel layer 30.

The light emitting device according to the embodiment may comprise thefirst connection part 90 and the second connection part 95. The firstconnection part 90 may be electrically connected to the first electrode80 and the conductive support member 70. The second connection part 95may be electrically connected to the reflective layer 17. According tothe embodiment, the second electrode 87 may comprise at least one of thereflective layer 17, the ohmic contact layer 15, and the first metallayer 35.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60. The first connectionpart 90 may be disposed through the channel layer 30. The firstconnection part 90 may be connected to the conductive support member 70through the channel layer 30.

The first connection part 90 may be disposed at the lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at the lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm.

The second connection part 95 may be electrically connected to the firstmetal layer 35. The second connection part 95 may make contact with thefirst metal layer 35. One end of the second connection part 95 may bedisposed on the channel layer 30. The one end of the second connectionpart 95 may be spaced apart from the sidewall of the light emittingstructure 10. The one end of the second connection part 95 may beexposed to the lateral side of the light emitting structure 10. Thesecond connection part 95 may electrically connected to the first metallayer 35 through the channel layer 30.

The second connection part 95 may be electrically connected to thesecond electrode 87. The second connection part 95 may make contact withthe second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

FIG. 8 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 8, componentsand structures the same as those described with reference to FIG. 1 willnot be further described in order to avoid redundancy.

According to the embodiment shown in FIG. 8, a protective layer 45 maybe disposed at the lateral side of the light emitting structure 10. Inaddition, the channel layer 30 may be disposed at the peripheral portionof the lower portion of the light emitting structure 10. The protectivelayer 45 may be disposed between the light emitting structure 10 and thefirst connection part 90. The protective layer 45 may insulate the firstconnection part 90 from the active layer 12. The protective layer 45 mayinsulate the first connection part 90 from the second conductivesemiconductor layer 13.

For example, the protective layer 45 may be realized by using an oxideor a nitride. For example, the protective layer 45 may comprise at leastone selected from the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄,Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The light emitting device according to the embodiment may comprise thechannel layer 30 disposed around the lower portion of the light emittingstructure 10. For example, the top surface of the channel layer 30 maybe disposed higher than the top surface of the active layer 12. One endof the channel layer 30 may be disposed under the second conductivesemiconductor layer 13. The one end of the channel layer 30 may makecontact with a bottom surface of the second conductive semiconductorlayer 13. The one end of the channel layer 30 may be disposed betweenthe second conductive semiconductor layer 13 and the reflective layer17. The one end of the channel layer 30 may be disposed between thesecond conductive semiconductor layer 13 and the second electrode 87.

For example, the channel layer 30 may be realized by using an oxide or anitride. For example, the channel layer 30 may comprise at least oneselected from the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄,Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN. The channel layer 30may be referred to as an isolation layer. The channel layer 30 may serveas an etching stopper when an isolation process is performed withrespect to the light emitting structure 10 thereafter. In addition,through the isolation process, the electrical characteristic of thelight emitting device can be prevented from being degraded.

The light emitting device according to the embodiment may comprise theinsulating layer 40 disposed between the first metal layer 35 and thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the second metal layer 50. The insulating layer 40may insulate the first metal layer 35 from the conductive support member70. For example, the insulating layer 40 may be realized by using anoxide or a nitride. For example, the insulating layer 40 may comprise atleast one selected from the group consisting of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The top surface of theinsulating layer 40 may be exposed to a peripheral portion of the lowerportion of the light emitting structure 10. The insulating layer 40 maysurround a peripheral portion of the channel layer 30.

The light emitting device according to the embodiment may comprise afirst connection part 90 and a second connection part 95. The firstconnection part 90 may be electrically connected to the first electrode80 and the conductive support member 70. The second connection part 95may be electrically connected to the reflective layer 17. The secondconnection part 95 may electrically connected to the second electrode87. According to the embodiment, the second electrode 87 may comprise atleast one of the reflective layer 17, the ohmic contact layer 15, andthe first metal layer 35.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60. The first connectionpart 90 may be disposed through the insulating layer 400. The firstconnection part 90 may be electrically connected to the conductivesupport member 70 through the insulating layer 40.

The first connection part 90 may be disposed at the lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at the lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm.

The second connection part 95 may be electrically connected to the firstmetal layer 35. The second connection part 95 may make contact with thefirst metal layer 35. One end of the second connection part 95 may bedisposed on the channel layer 30. The one end of the second connectionpart 95 may be spaced apart from the sidewall of the light emittingstructure 10. The one end of the second connection part 95 may beexposed to the lateral side of the light emitting structure 10.

The second connection part 95 may be electrically connected to thesecond electrode 87. The second connection part 95 may make contact withthe second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

FIG. 9 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 9, componentsand structures the same as those described with reference to FIG. 1 willnot be further described in order to avoid redundancy.

According to the light emitting device of the embodiment, an ohmicreflective layer 19 may be disposed under the light emitting structure10. The ohmic reflective layer 19 may be realized such that the ohmicreflective layer 19 serve as both of the reflective layer 17 and theohmic contact layer 15. Accordingly, the ohmic reflective layer 19 maymake ohmic contact with the second conductive semiconductor layer 13,and reflect the light thereon from the light emitting structure 10.

In this case, the ohmic reflective layer 19 may comprise multiplelayers. For example, the ohmic reflective layer 19 may have a structurein which an Ag layer and an Ni layer are alternately formed, or maycomprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

According to the light emitting device of the embodiment, the conductivesupport member 70 disposed under the ohmic reflective layer 19 may beelectrically connected to the first conductive semiconductor layer 11disposed on the ohmic reflective layer 19.

The second electrode 87 according to the embodiment may comprise atleast one of the ohmic reflective layer 19 and the first metal layer 35.In the light emitting device according to the embodiment, the conductivesupport member 70 disposed under the second electrode 87 may beelectrically connected to the first conductive semiconductor layer 11disposed on the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the ohmic reflective layer 19.The second connection part 95 may be electrically connected to thesecond electrode 87. Therefore, the second connection part 95 isconnected to a power pad through a wire bonding scheme, therebysupplying power to the second conductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

FIG. 10 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 10, componentsand structures the same as those described with reference to FIG. 1 willnot be further described in order to avoid redundancy.

According to the light emitting device of the embodiment, the ohmicreflective layer 19 may be disposed under the light emitting structure10. The ohmic reflective layer 19 may be realized such that the ohmicreflective layer 19 serve as both of the reflective layer 17 and theohmic contact layer 15. Accordingly, the ohmic reflective layer 19 maymake ohmic contact with the second conductive semiconductor layer 13,and reflect the light thereon from the light emitting structure 10.

In this case, the ohmic reflective layer 19 may comprise multiplelayers. For example, the ohmic reflective layer 19 may have a structurein which an Ag layer and an Ni layer are alternately formed, or maycomprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

According to the light emitting device of the embodiment, the conductivesupport member 70 disposed under the ohmic reflective layer 19 may beelectrically connected to the first conductive semiconductor layer 11disposed on the ohmic reflective layer 19.

The second electrode 87 according to the embodiment may comprise atleast one of the ohmic reflective layer 19 and the first metal layer 35.In the light emitting device according to the embodiment, the conductivesupport member 70 disposed under the second electrode 87 may beelectrically connected to the first conductive semiconductor layer 11disposed on the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the ohmic reflective layer 19.The second connection part 95 may be electrically connected to thesecond electrode 87. Therefore, the second connection part 95 isconnected to a power pad through a wire bonding scheme, therebysupplying power to the second conductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

FIG. 11 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 11, componentsand structures the same as those described with reference to FIG. 8 willnot be further described in order to avoid redundancy.

According to the light emitting device of the embodiment, the ohmicreflective layer 19 may be disposed under the light emitting structure10. The ohmic reflective layer 19 may be realized such that the ohmicreflective layer 19 serve as both of the reflective layer 17 and theohmic contact layer 15. Accordingly, the ohmic reflective layer 19 maymake ohmic contact with the second conductive semiconductor layer 13,and reflect the light thereon from the light emitting structure 10.

In this case, the ohmic reflective layer 19 may comprise multiplelayers. For example, the ohmic reflective layer 19 may have a structurein which an Ag layer and an Ni layer are alternately formed, or maycomprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

According to the light emitting device of the embodiment, the conductivesupport member 70 disposed under the ohmic reflective layer 19 may beelectrically connected to the first conductive semiconductor layer 11disposed on the ohmic reflective layer 19.

The second electrode 87 according to the embodiment may comprise atleast one of the ohmic reflective layer 19 and the first metal layer 35.In the light emitting device according to the embodiment, the conductivesupport member 70 disposed under the second electrode 87 may beelectrically connected to the first conductive semiconductor layer 11disposed on the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the ohmic reflective layer 19.The second connection part 95 may be electrically connected to thesecond electrode 87. Therefore, the second connection part 95 isconnected to a power pad through a wire bonding scheme, therebysupplying power to the second conductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

FIG. 12 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 12, componentsand structures the same as those described with reference to FIGS. 1 to11 will not be further described in order to avoid redundancy.

As shown in FIG. 12, the light emitting device according to theembodiment may comprise the light emitting structure 10, the conductivesupport member 70, the first electrode 80, and the second electrode 87.

The light emitting structure 10 may comprise the first conductivesemiconductor layer 11, the active layer 12, and the second conductivesemiconductor layer 13. The active layer 12 may be disposed between thefirst conductive semiconductor layer 11 and the second conductivesemiconductor layer 13. The active layer 12 may be disposed under thefirst conductive semiconductor layer 11, and the second conductivesemiconductor layer 13 may be disposed under the active layer 12.

The light emitting device according to the embodiment may comprise thechannel layer 30 disposed at the peripheral portion of the lower portionof the light emitting structure 10. For example, the top surface thechannel layer 30 may be disposed higher than the top surface of theactive layer 12. The channel layer 30 may surround the active layer 12.The channel layer 30 may surround a peripheral portion of the secondconductive semiconductor layer 13. One end of the channel layer 30 maybe disposed under the second conductive semiconductor layer 13. The oneend of the channel layer 30 may make contact with a bottom surface ofthe second conductive semiconductor layer 13. The one end of the channellayer 30 may be disposed between the second conductive semiconductorlayer 13 and the second electrode 87. The one end of the channel layer30 may be disposed between the second conductive semiconductor layer 13and the reflective layer 17.

For example, the channel layer 30 may be realized by using an oxide or anitride. For example, the channel layer 30 may comprise at least oneselected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy,Al2O3, TiO2, and AlN. The channel layer 30 may be referred to as anisolation layer. The channel layer 30 may serve as an etching stopperwhen an isolation process is performed with respect to the lightemitting structure 10 thereafter. In addition, through the isolationprocess, the electrical characteristic of the light emitting device canbe prevented from being degraded.

The first electrode 80 may be electrically connected to the firstconductive semiconductor layer 11. The first electrode 80 may bedisposed on the first conductive semiconductor layer 11. The firstelectrode 80 may make contact with the first conductive semiconductorlayer 11. The reflective layer 17 may be electrically connected to thesecond conductive semiconductor layer 13. The reflective layer 17 may bedisposed under the light emitting structure 10. The reflective layer 17may be disposed under the second conductive semiconductor layer 13.

The light emitting device according to the embodiment may comprise theohmic contact layer 15 disposed between the reflective layer 17 and thesecond conductive semiconductor layer 13. The ohmic contact layer 15 maycontact with the second conductive semiconductor layer 13.

The ohmic contact layer 15 may make ohmic contact with the lightemitting structure 10. The ohmic contact layer 15 may comprise an ohmiccontact region with the light emitting structure 10. The reflectivelayer 17 may be electrically connected to the second conductivesemiconductor layer 13. In addition, the reflective layer 17 reflectslight incident thereto from the light emitting structure 10 to increasethe quantity of light extracted to an outside. For example, the ohmiccontact layer 15 may comprise a transparent conductive oxide layer. Thereflective layer 17 may comprise a material having high reflectance.

The light emitting device according to the embodiment may comprise thefirst metal layer 35 disposed under the reflective layer 17. The firstmetal layer 35 may comprise at least one of Au, Cu, Ni, Ti, Ti—W, Cr, W,Pt, V, Fe, and Mo.

According to the embodiment, the second electrode 87 may comprise atleast one of the reflective layer 17, the ohmic contact layer 15, andthe first metal layer 35. For example, the second electrode 87 maycomprise all of the reflective layer 17, the first metal layer 35, andthe ohmic contact layer 15, or may comprise one or two selected from theof the reflective layer 17, the first metal layer 35, and the ohmiccontact layer 15.

The light emitting device according to the embodiment may comprise thesecond metal layer 50 disposed under the first metal layer 35.

The second metal layer 50 may comprise at least one of Cu, Ni, Ti, Ti—W,Cr, W, Pt, V, Fe, and Mo. The second metal layer 50 may serve as adiffusion barrier layer. The bonding layer 60 and the conductive supportmember 70 may be disposed under the second metal layer 50.

The second metal layer 50 may prevent a material included in the bondinglayer 60 from being diffused to the reflective layer 17 in the processof providing the bonding layer 60. The second metal layer 50 may preventa material, such as zinc (Sn), included in the bonding layer 60 fromexerting an influence on the reflective layer 17.

The bonding layer 60 comprises barrier metal or bonding metal. Forexample, the bonding layer 60 may comprise at least one of Ti, Au, Sn,Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd and Ta. The conductive support member70 may support the light emitting structure 10 according to theembodiment while performing a heat radiation function. The bonding layer60 may be realized in the form of a seed layer.

The conductive support member 70 may comprise at least one ofsemiconductor substrates (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, and SiGesubstrates) implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu—W, orimpurities.

According to the embodiment, power may be applied to the light emittingstructure 10 through the second electrode 87 and the first electrode 80.According to the embodiment, the first electrode 80 may comprise anohmic layer, an intermediate layer, and an upper layer. The ohmic layermay comprise a material selected from the group consisting of Cr, V, W,Ti, and Zn to make ohmic contact. The intermediate layer may be realizedby using a material selected from the group consisting of Ni, Cu, andAl. For example, the upper layer may comprise Au. The first electrode 80may comprise at least one selected from the group consisting of Cr, V,W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

A roughness 85 may be formed on the top surface of the first conductivesemiconductor layer 11. Accordingly, the quantity of light extractedupward at the region where the roughness 85 is formed can be increased.

The light emitting device according to the embodiment may comprise theinsulating layer 40 disposed between the first metal layer 35 and thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the second metal layer 50. The insulating layer 40may insulate the first metal layer 35 from the conductive support member70. For example, the insulating layer 40 may be realized by using anoxide or a nitride. For example, the insulating layer 40 may comprise atleast one selected from the group consisting of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The top surface of theinsulating layer 40 may be exposed to a peripheral portion of the lowerportion of the light emitting structure 10. The insulating layer 40 maysurround a peripheral portion of the channel layer 30.

The light emitting device according to the embodiment may comprise thefirst connection part 90 and the second connection part 95. The firstconnection part 90 may be electrically connected to the first electrode80 and the conductive support member 70. The second connection part 95may be electrically connected to the reflective layer 17. The secondconnection part 95 may electrically connected to the second electrode87.

As shown in FIG. 13, the light emitting device according to theembodiment may comprise the second connection part 95. The secondconnection part 95 may electrically connected to the second electrode87. FIG. 13 is a view showing an example of the second connection partof the light emitting device according to the embodiment.

One end of the second connection part 95 may be disposed on the channellayer 30. The second connection part 95 may make contact with the firstmetal layer 35, and may make contact with the reflective layer 17.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60.

The first connection part 90 may be disposed through the insulatinglayer 400. The first connection part 90 may be electrically connected tothe conductive support member 70 through the insulating layer 40. Inaddition, the first connection part 90 may be electrically connected tothe second metal layer 50 through the channel layer 30. The firstconnection part 90 may be electrically connected to the second metallayer 50 through the channel layer 30 and the insulating layer 40.

The first connection part 90 may be disposed at the lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at the lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm. Accordingly, the first connection part 90 may electrically stablyinsulate the active layer 12.

The second connection part 95 may be electrically connected to the firstmetal layer 35. The second connection part 95 may make contact with thefirst metal layer 35. One end of the second connection part 95 may bedisposed on the channel layer 30. The one end of the second connectionpart 95 may be spaced apart from the sidewall of the light emittingstructure 10. The one end of the second connection part 95 may beexposed to the lateral side of the light emitting structure 10.

The second connection part 95 may be electrically connected to the firstmetal layer 35 through the channel layer 30. In addition, the secondconnection part 95 may be electrically connected to the first metallayer 35 through the insulating layer 40. The second connection part 95may be electrically connected to the second electrode 87. The secondconnection part 95 may make contact with the second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

According to the light emitting device of the embodiment, the lightemitting structure 10 disposed on the upper portion of the lightemitting device has the same polarity as those of the second metal layer50, the bonding layer 60, and the conductive support substrate 70disposed at the lower portion of the light emitting structure.Accordingly, as shown in FIG. 13, one lateral side of the light emittingstructure 10 may be disposed at a predetermined distance B or less fromone vertical-directional lateral side of the second metal layer 50 orthe conductive support member 70. The one lateral side of the lightemitting structure 10 may be aligned at a distance of 20 μm from thevertical-directional lateral side of the second metal layer 50 or theconductive support member 70. In other words, according to theembodiment, even if the lateral side of the light emitting structure 10is vertically aligned with the lateral side of the second metal layer 50or the conductive support member 70 at the distance of 20 μm or lessfrom a vertical plane, the electric short between the lateral side ofthe light emitting structure 10 and the lateral side of the second metallayer 50 or the conductive support member 70 can be prevented. Inaddition, one lateral side of the light emitting structure 10 may bealigned in line with one lateral side of the second metal layer 50 orthe conductive support member 70 in the vertical direction.

According to the light emitting structure of the related art, in orderto ensure electrical reliability, the lateral side of the light emittingstructure may be disposed at the distance in the range of 50 μm to 70 μmfrom a vertical surface corresponding to the lateral side of theconductive support member. However, according to the light emittingdevice of the embodiment, the lateral side of the light emittingstructure 10 may be disposed at the distance of about 20 or less fromthe lateral side of the conductive support member 70. Accordingly, whencomparing with the light emitting device according to the related art,the area of the light emitting structure 10 can be enlarged.

In addition, according to the embodiment, as shown in FIG. 13, an outersurface of the first conductive semiconductor layer 11 may protrude outof an outer surface of the top surface of the first connection part 90by a predetermined distance A. For example, the outer surface of thefirst conductive semiconductor layer 11 may protrude from the outersurface of the first connection part 90 by the distance of 10 μm ormore.

Accordingly, when comparing with the light emitting device according tothe related art, the light emitting structure 10 according to theembodiment may be formed with a wider area. Accordingly, since the lightemitting structure 10 according to the embodiment may comprise a widersemiconductor layer, light may be emitted from a wider area, and lightextraction can be improved.

Hereinafter, a method of fabricating a light emitting device accordingto the embodiment will be described with reference to FIGS. 14 to 18. Inthe following description about the method of fabricating the lightemitting device according to the embodiment with reference to FIGS. 14to 18, components and structures the same as those described withreference to FIGS. 1 to 11 will be described in brief or will not bedescribed.

According to the method of fabricating the light emitting device of theembodiment, as shown in FIG. 14, the first conductive semiconductorlayer 11, the active layer 12, and the second conductive semiconductorlayer 13 may be formed on the substrate 5. The first conductivesemiconductor layer 11, the active layer 12, and the second conductivesemiconductor layer 13 may be defined as the light emitting structure10.

Next, as shown in FIG. 15, a portion of the first conductivesemiconductor layer 11 may be exposed by performing an etching schemefor the light emitting structure 10. In this case, the etching maycomprise a wet etching scheme or a dry etching scheme.

Next, as shown in FIG. 16, the light emitting structure 10 may bedisposed therein with the channel layer 30, the ohmic contact layer 15,and the reflective layer 17.

For example, the channel layer 30 may comprise at least one selectedfrom the group consisting of SiO₂, Si_(x)O_(y), Si₃N₄, Si_(x)N_(y),SiO_(x)N_(y), Al₂O₃, TiO₂, and AlN.

The ohmic contact layer 15 may be disposed between the reflective layer17 and the second conductive semiconductor layer 13. The ohmic contactlayer 15 may make contact with the second conductive semiconductor layer13.

The ohmic contact layer 15 may make contact with the light emittingstructure 10. The reflective layer 17 may be electrically connected tothe second conductive semiconductor layer 13. The ohmic contact layer 15may comprise an ohmic-contact region with the light emitting structure10. The reflective layer 17 may comprise a material having highreflectance. For example, the reflective layer 17 may have a structurein which an Ag layer and a Ni layer are alternately formed, and maycomprise Ni/Ag/Ni or a TI layer, and a Pt layer. In addition, the ohmiccontact layer 15 may be disposed under the reflective layer 17, and atleast a portion of the ohmic contact layer 15 may make ohmic contactwith the light emitting structure 10 through the reflective layer 17.

Thereafter, as shown in FIG. 17, the first metal layer 35, theinsulating layer 40, the second metal layer 50, the bonding layer 60,and the conductive support member 70 may be formed on the reflectivelayer 17.

The first metal layer 35 may comprise at least one of Au, Cu, Ni, Ti,Ti—W, Cr, W, Pt, V, Fe, and Mo.

According to the embodiment, the second electrode 87 may comprise atleast one of the reflective layer 17, the ohmic contact layer 15, andthe first metal layer 35. For example, the second electrode 87 maycomprise all of the reflective layer 17, the first metal layer 35, andthe ohmic contact layer 15, or may comprise one or two selected from theof the reflective layer 17, the first metal layer 35, and the ohmiccontact layer 15.

The insulating layer 40 may insulate the first metal layer 35 from thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the conductive support member 70.

The insulating layer 40 may be realized by using an oxide or a nitride.For example, the insulating layer 40 may comprise at least one selectedfrom the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3,TiO2, and AlN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The insulating layer40 may surround a peripheral portion of the channel layer 30.

The second metal layer 50 may comprise at least one of Cu, Ni, Ti, Ti—W,Cr, W, Pt, V, Fe, and Mo. The second metal layer 50 may serve as adiffusion barrier layer.

The second metal layer 50 may prevent a material included in the bondinglayer 60 from being diffused to the reflective layer 17 in the processof providing the bonding layer 60. The second metal layer 50 may preventa material, such as zinc (Sn), included in the bonding layer 60 fromexerting an influence on the reflective layer 17.

Next, the substrate 5 is removed from the first conductive semiconductorlayer 11. According to one example, the substrate 5 may be removedthrough a laser lift off (LLO) process. The LLO process is a process tolaminate the substrate 5 from the first conductive semiconductor layer11 by irradiating a laser to the bottom surface of the substrate 5.

In addition, as shown in FIG. 18, the lateral side of the light emittingstructure 10 is etched through an isolation etching process to exposeportions of the channel layer 30 and the insulating layer 40. In thiscase, a portion of the insulating layer 40 may be exposed. The isolationetching process may be performed through a dry etching process such asan inductively coupled plasma (ICP), but the embodiment is not limitedthereto.

The roughness 85 may be formed on the top surface of the firstconductive semiconductor layer 11. Accordingly, a light extractionpattern may be disposed on the light emitting structure 10. Aconcave-convex pattern may be disposed on the light emitting structure10. For example, the light extraction pattern provided on the lightemitting structure 10 may be formed through a PEC (photo electrochemical) etching process. Therefore, according to the embodiment, theexternal light extraction effect can be increased.

Next, as shown in FIG. 18, the light emitting structure 10 may bedisposed thereon with the first electrode 80, the first connection part90, and the second connection part 95.

The first electrode 80 may be electrically connected to the firstconductive semiconductor layer 11. A portion of the first electrode 80may make contact with the first conductive semiconductor layer 11.According to the embodiment, power may be applied to the light emittingstructure 10 through the first electrode 80 and the second electrode 87.

The first electrode 80 may comprise an ohmic layer, an intermediatelayer, and an upper layer. The ohmic layer may comprise a materialselected from the group consisting of Cr, V, W, Ti, and Zn, and may makeohmic contact. The intermediate layer may be realized by using amaterial selected from the group consisting of Ni, Cu, and Al. Forexample, the upper layer may comprise Au. The first electrode 80 maycomprise at least one selected from the group consisting of Cr, V, W,Ti, Zn, Ni, Cu, Al, and Au.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60.

The first connection part 90 may be disposed at the lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at the lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm.

In this case, as shown in FIG. 13, one end of the second connection part95 may be disposed on the channel layer 30. The one end of the secondconnection part 95 may be spaced apart from the sidewall of the lightemitting structure 10. The one end of the second connection part 95 maybe exposed to the lateral side of the light emitting structure 10. Thesecond connection part 95 may electrically connected to the first metallayer 35 through the channel layer 30. In addition, the secondconnection part 95 may be electrically connected to the first metallayer 35 through the insulating layer 40. The second connection part 95may be electrically connected to the second electrode 87. The secondconnection part 95 may make contact with the second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

According to the light emitting device of the embodiment, the lightemitting structure 10 disposed on the upper portion of the lightemitting device has the same polarity as those of the second metal layer50, the bonding layer 60, and the conductive support substrate 70disposed at the lower portion of the light emitting structure.Accordingly, as shown in FIG. 2, one lateral side of the light emittingstructure 10 may be disposed at a predetermined distance B or less fromone vertical-directional lateral side of the conductive support member70. For example, the one lateral side of the light emitting structure 10may be aligned at a distance of 20 μm from the one vertical-directionallateral side of the conductive support member 70. In other words,according to the embodiment, even if the lateral side of the lightemitting structure 10 is vertically aligned with the lateral side of thesecond metal layer 50 or the conductive support member 70 at thedistance of 20 μm or less from a vertical plane, the electric shortbetween the lateral side of the light emitting structure 10 and thelateral side of the conductive support member 70 can be prevented. Inaddition, one lateral side of the light emitting structure 10 may bealigned in line with one lateral side of the conductive support member70 in the vertical direction.

According to the light emitting structure of the related art, in orderto ensure electrical reliability, the lateral side of the light emittingstructure may be disposed at the distance in the range of 50 μm to 70 μmfrom a vertical surface corresponding to the lateral side of theconductive support member. However, according to the light emittingdevice of the embodiment, the lateral side of the light emittingstructure 10 may be disposed at the distance of about 20 or less fromthe lateral side of the conductive support member 70. Accordingly, whencomparing with the light emitting device according to the related art,the area of the light emitting structure 10 can be enlarged.

In addition, according to the embodiment, as shown in FIG. 14, an outersurface of the first conductive semiconductor layer 11 may protrude outof an outer surface of the top surface of the first connection part 90by a predetermined distance A. For example, the outer surface of thefirst conductive semiconductor layer 11 may protrude from the outersurface of the first connection part 90 by the distance of 10 μm ormore.

Accordingly, when comparing with the light emitting device according tothe related art, the light emitting structure 10 according to theembodiment may be formed with a wider area. Accordingly, since the lightemitting structure 10 according to the embodiment may comprise a widersemiconductor layer, light may be emitted from a wider area, and lightextraction can be improved.

Meanwhile, the process of forming each layer described above is providedfor the illustrative purpose, and the process sequence thereof may bevariously modified.

FIG. 19 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 19, componentsand structures the same as those described with reference to FIG. 12will not be further described in order to avoid redundancy.

According to the embodiment shown in FIG. 19, the channel layer 30 isdisposed at the peripheral portion of the lower portion of the lightemitting structure 10, and the insulating layer 40 may not be exposed tothe peripheral portion of the lower portion of the light emittingstructure 10.

The light emitting device according to the embodiment may comprise thechannel layer 30 disposed at the peripheral portion of the lower portionof the light emitting structure 10. For example, the top surface thechannel layer 30 may be disposed higher than the top surface of theactive layer 12. The channel layer 30 may surround the active layer 12.The channel layer 30 may surround a peripheral portion of the secondconductive semiconductor layer 13. One end of the channel layer 30 maybe disposed under the second conductive semiconductor layer 13. The oneend of the channel layer 30 may make contact with a bottom surface ofthe second conductive semiconductor layer 13. The one end of the channellayer 30 may be disposed between the second conductive semiconductorlayer 13 and the reflective layer 17.

The light emitting device according to the embodiment may comprise aninsulating layer 40 disposed between the first metal layer 35 and thesecond metal layer 50. The insulating layer 40 may insulate the firstmetal layer 35 from the second metal layer 50. The insulating layer 40may insulate the first metal layer 35 from the conductive support member70. For example, the insulating layer 40 may be realized by using anoxide or a nitride. For example, the insulating layer 40 may comprise atleast one selected from the group consisting of SiO₂, Si_(x)O_(y),Si₃N₄, Si_(x)N_(y), SiO_(x)N_(y), Al₂O₃, TiO₂, and MN.

The insulating layer 40 may surround a peripheral portion of the firstmetal layer 35. A portion of the insulating layer 40 may make contactwith the lateral side of the reflective layer 17. The insulating layer40 may surround a peripheral portion of the channel layer 30.

The light emitting device according to the embodiment may comprise thefirst connection part 90 and the second connection part 95. The firstconnection part 90 may be electrically connected to the first electrode80 and the conductive support member 70.

The first connection part 90 may make contact with the first electrode80. The first connection part 90 may be electrically connected to thesecond metal layer 50. The first connection part 90 may make contactwith the second metal layer 50. The first connection part 90 may beelectrically connected to the conductive support member 70 through thesecond metal layer 50 and the bonding layer 60. The first connectionpart 90 may be disposed through the channel layer 30. The firstconnection part 90 may be electrically connected to the conductivesupport member 70 through the channel layer 30.

The first connection part 90 may be disposed at the lateral side of thelight emitting structure 10. The first connection part 90 may bedisposed at the lateral side of the first conductive semiconductor layer11. The first connection part 90 may make contact with the lateral sideof the first conductive semiconductor layer 11. The channel layer 30 mayinsulate the first connection part 90 from the active layer 12. Thechannel layer 30 may insulate the first connection part 90 from thesecond conductive semiconductor layer 13. The first connection part 90may be spaced apart from the active layer 12 by a distance of at least 3μm.

As shown in FIG. 13, one end of the second connection part 95 may bedisposed on the channel layer 30. The one end of the second connectionpart 95 may be spaced apart from the sidewall of the light emittingstructure 10. The one end of the second connection part 95 may beexposed to the lateral side of the light emitting structure 10. Thesecond connection part 95 may electrically connected to the first metallayer 35 through the channel layer 30. In addition, the secondconnection part 95 may be electrically connected to the first metallayer 35 through the insulating layer 40. The second connection part 95may be electrically connected to the second electrode 87. The secondconnection part 95 may make contact with the second electrode 87.

The first connection part 90 and the second connection part 95 maycomprise at least one of Cr, V, W, Ti, Zn, Ni, Pt, Cu, Al, Au, and Mo.

In the light emitting device according to the embodiment, the firstconnection part 90 may be electrically connected to the first conductivesemiconductor layer 11 disposed on the second electrode 87 through theconductive support member 70 disposed under the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the second electrode 87.Therefore, the second connection part 95 is connected to a power padthrough a wire bonding scheme, thereby supplying power to the secondconductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

According to the light emitting device of the embodiment, the lightemitting structure 10 disposed on the upper portion of the lightemitting device has the same polarity as those of the second metal layer50, the bonding layer 60, and the conductive support substrate 70disposed at the lower portion of the light emitting structure.Accordingly, as shown in FIG. 13, one lateral side of the light emittingstructure 10 may be disposed at a predetermined distance B or less fromone vertical-directional lateral side of the conductive support member70. For example, the one lateral side of the light emitting structure 10may be aligned at a distance of 20 μm from the one vertical-directionallateral side of the conductive support member 70. In other words,according to the embodiment, even if the lateral side of the lightemitting structure 10 is vertically aligned with the lateral side of thesecond metal layer 50 or the conductive support member 70 at thedistance of 20 μm or less from a vertical plane, the electric shortbetween the lateral side of the light emitting structure 10 and thelateral side of the conductive support member 70 can be prevented. Inaddition, one lateral side of the light emitting structure 10 may bealigned in line with one lateral side of the conductive support member70 in the vertical direction.

According to the light emitting structure of the related art, in orderto ensure electrical reliability, the lateral side of the light emittingstructure may be disposed at the distance in the range of 50 μm to 70 μmfrom a vertical surface corresponding to the lateral side of theconductive support member. However, according to the light emittingdevice of the embodiment, the lateral side of the light emittingstructure 10 may be disposed at the distance of about 20 or less fromthe lateral side of the conductive support member 70. Accordingly, whencomparing with the light emitting device according to the related art,the area of the light emitting structure 10 can be enlarged.

In addition, according to the embodiment, as shown in FIG. 13, an outersurface of the first conductive semiconductor layer 11 may protrude outof an outer surface of the top surface of the first connection part 90by a predetermined distance A. For example, the outer surface of thefirst conductive semiconductor layer 11 may protrude from the outersurface of the first connection part 90 by the distance of 10 μm ormore.

Accordingly, when comparing with the light emitting device according tothe related art, the light emitting structure 10 according to theembodiment may be formed with a wider area. Accordingly, since the lightemitting structure 10 according to the embodiment may comprise a widersemiconductor layer, light may be emitted from a wider area, and lightextraction can be improved.

FIG. 20 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 20, componentsand structures the same as those described with reference to FIG. 12will not be further described in order to avoid redundancy.

According to the light emitting device of the embodiment, an ohmicreflective layer 19 may be disposed under the light emitting structure10. The ohmic reflective layer 19 may be realized such that the ohmicreflective layer 19 serve as both of the reflective layer 17 and theohmic contact layer 15. Accordingly, the ohmic reflective layer 19 maymake ohmic contact with the second conductive semiconductor layer 13,and reflect the light thereon from the light emitting structure 10.

In this case, the ohmic reflective layer 19 may comprise multiplelayers. For example, the ohmic reflective layer 19 may have a structurein which an Ag layer and an Ni layer are alternately formed, or maycomprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

According to the light emitting device of the embodiment, the conductivesupport member 70 disposed under the ohmic reflective layer 19 may beelectrically connected to the first conductive semiconductor layer 11disposed on the ohmic reflective layer 19.

The second electrode 87 according to the embodiment may comprise atleast one of the ohmic reflective layer 19 and the first metal layer 35.In the light emitting device according to the embodiment, the conductivesupport member 70 disposed under the second electrode 87 may beelectrically connected to the first conductive semiconductor layer 11disposed on the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the ohmic reflective layer 19.The second connection part 95 may be electrically connected to thesecond electrode 87. Therefore, the second connection part 95 isconnected to a power pad through a wire bonding scheme, therebysupplying power to the second conductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

According to the light emitting device of the embodiment, the lightemitting structure 10 disposed on the upper portion of the lightemitting device has the same polarity as those of the second metal layer50, the bonding layer 60, and the conductive support substrate 70disposed at the lower portion of the light emitting structure.Accordingly, as shown in FIG. 2, one lateral side of the light emittingstructure 10 may be disposed at a predetermined distance B or less fromone vertical-directional lateral side of the conductive support member70. For example, the one lateral side of the light emitting structure 10may be aligned at a distance of 20 μm from the one vertical-directionallateral side of the conductive support member 70. In other words,according to the embodiment, even if the lateral side of the lightemitting structure 10 is vertically aligned with the lateral side of thesecond metal layer 50 or the conductive support member 70 at thedistance of 20 μm or less from a vertical plane, the electric shortbetween the lateral side of the light emitting structure 10 and thelateral side of the conductive support member 70 can be prevented. Inaddition, one lateral side of the light emitting structure 10 may bealigned in line with one lateral side of the conductive support member70 in the vertical direction.

According to the light emitting structure of the related art, in orderto ensure electrical reliability, the lateral side of the light emittingstructure may be disposed at the distance in the range of 50 μm to 70 μmfrom a vertical surface corresponding to the lateral side of theconductive support member. However, according to the light emittingdevice of the embodiment, the lateral side of the light emittingstructure 10 may be disposed at the distance of about 20 or less fromthe lateral side of the conductive support member 70. Accordingly, whencomparing with the light emitting device according to the related art,the area of the light emitting structure 10 can be enlarged.

In addition, according to the embodiment, as shown in FIG. 13, an outersurface of the first conductive semiconductor layer 11 may protrude outof an outer surface of the top surface of the first connection part 90by a predetermined distance A. For example, the outer surface of thefirst conductive semiconductor layer 11 may protrude from the outersurface of the first connection part 90 by the distance of 10 μm ormore.

Accordingly, when comparing with the light emitting device according tothe related art, the light emitting structure 10 according to theembodiment may be formed with a wider area. Accordingly, since the lightemitting structure 10 according to the embodiment may comprise a widersemiconductor layer, light may be emitted from a wider area, and lightextraction can be improved.

FIG. 21 is a sectional view showing still another example of a lightemitting device according to the embodiment. In the followingdescription about the light emitting device shown in FIG. 21, componentsand structures the same as those described with reference to FIG. 19will not be further described in order to avoid redundancy.

According to the light emitting device of the embodiment, the ohmicreflective layer 19 may be disposed under the light emitting structure10. The ohmic reflective layer 19 may be realized such that the ohmicreflective layer 19 serve as both of the reflective layer 17 and theohmic contact layer 15. Accordingly, the ohmic reflective layer 19 maymake ohmic contact with the second conductive semiconductor layer 13,and reflect the light thereon from the light emitting structure 10.

In this case, the ohmic reflective layer 19 may comprise multiplelayers. For example, the ohmic reflective layer 19 may have a structurein which an Ag layer and an Ni layer are alternately formed, or maycomprise a Ni/Ag/Ni layer, a Ti layer, or a Pt layer.

According to the light emitting device of the embodiment, the conductivesupport member 70 disposed under the ohmic reflective layer 19 may beelectrically connected to the first conductive semiconductor layer 11disposed on the ohmic reflective layer 19.

The second electrode 87 according to the embodiment may comprise atleast one of the ohmic reflective layer 19 and the first metal layer 35.In the light emitting device according to the embodiment, the conductivesupport member 70 disposed under the second electrode 87 may beelectrically connected to the first conductive semiconductor layer 11disposed on the second electrode 87.

Accordingly, power may be supplied to the first conductive semiconductorlayer 11 through a scheme of attaching the conductive support member 70to the bonding pad. According to the embodiment, the second connectionpart 95 may be electrically connected to the ohmic reflective layer 19.The second connection part 95 may be electrically connected to thesecond electrode 87. Therefore, the second connection part 95 isconnected to a power pad through a wire bonding scheme, therebysupplying power to the second conductive semiconductor layer 13.

According to the light emitting device of the embodiment, power may besupplied to the light emitting structure 10 through the conductivesupport member 70 and the second connection part 95. Therefore,according to the embodiment, current concentration can be prevented, andthe electrical reliability can be improved.

According to the light emitting device of the embodiment, the lightemitting structure 10 disposed on the upper portion of the lightemitting device has the same polarity as those of the second metal layer50, the bonding layer 60, and the conductive support substrate 70disposed at the lower portion of the light emitting structure.Accordingly, as shown in FIG. 13, one lateral side of the light emittingstructure 10 may be disposed at a predetermined distance B or less fromone vertical-directional lateral side of the conductive support member70. For example, the one lateral side of the light emitting structure 10may be aligned at a distance of 20 μm from the one vertical-directionallateral side of the conductive support member 70. In other words,according to the embodiment, even if the lateral side of the lightemitting structure 10 is vertically aligned with the lateral side of thesecond metal layer 50 or the conductive support member 70 at thedistance of 20 μm or less from a vertical plane, the electric shortbetween the lateral side of the light emitting structure 10 and thelateral side of the conductive support member 70 can be prevented. Inaddition, one lateral side of the light emitting structure 10 may bealigned in line with one lateral side of the conductive support member70 in the vertical direction.

According to the light emitting structure of the related art, in orderto ensure electrical reliability, the lateral side of the light emittingstructure may be disposed at the distance in the range of 50 μm to 70 μmfrom a vertical surface corresponding to the lateral side of theconductive support member. However, according to the light emittingdevice of the embodiment, the lateral side of the light emittingstructure 10 may be disposed at the distance of about 20 or less fromthe lateral side of the conductive support member 70. Accordingly, whencomparing with the light emitting device according to the related art,the area of the light emitting structure 10 can be enlarged.

In addition, according to the embodiment, as shown in FIG. 13, an outersurface of the first conductive semiconductor layer 11 may protrude outof an outer surface of the top surface of the first connection part 90by a predetermined distance A. For example, the outer surface of thefirst conductive semiconductor layer 11 may protrude from the outersurface of the first connection part 90 by a 10 μm or more.

Accordingly, when comparing with the light emitting device according tothe related art, the light emitting structure 10 according to theembodiment may be formed with a wider area. Accordingly, since the lightemitting structure 10 according to the embodiment may comprise a widersemiconductor layer, light may be emitted from a wider area, and lightextraction can be improved.

FIG. 22 is a sectional view showing a light emitting device package towhich the light emitting device according to the embodiment is applied.

Referring to FIG. 22, the light emitting device package according to theembodiment comprises a body 120, first and second lead electrodes 131and 132 formed on the body 120, a light emitting device 100 disposed onthe body 120 and electrically connected to the first and second leadelectrodes 131 and 132 and a molding member 140 that surrounds the lightemitting device 100.

The body 120 may comprise silicon, synthetic resin or metallic material,and an inclined surface may be formed in the vicinity of the lightemitting device 100.

The first and second lead electrodes 131 and 132 are electricallyisolated from each other to supply power to the light emitting device100. The first and second lead electrode 131 and 132 can improve thelight efficiency by reflecting the light emitted from the light emittingdevice 100. Further, the first and second lead electrodes 131 and 132dissipate heat generated from the light emitting device 100 to theoutside.

The light emitting device 100 can be installed on the body 120 or thefirst or second lead electrode 131 or 132.

The light emitting device 100 may be electrically connected to the firstand second lead electrodes 131 and 132 through one of a wire scheme, aflip-chip scheme, and a die-bonding scheme.

The molding member 140 may surround the light emitting device 100 toprotect the light emitting device 100. In addition, the molding member140 may comprise phosphors to change the wavelength of the light emittedfrom the light emitting device 100.

A plurality of light emitting device or light emitting device packagesaccording to the embodiment may be arrayed on a board, and an opticalmember comprising a lens, a light guide plate, a prism sheet, or adiffusion sheet may be disposed on the optical path of the light emittedfrom the light emitting device package. The light emitting devicepackage, the board, and the optical member may serve as a light unit.The light unit is realized in a top view type or a side view type andvariously provided in display devices of a portable terminal and alaptop computer or a lighting apparatus and an indicator apparatus. Inaddition, a lighting apparatus according to another embodiment cancomprise a light emitting device, or a light emitting device packageaccording to the embodiment. For example, the lighting apparatus maycomprise a lamp, a signal lamp, an electric sign board and a headlightof a vehicle.

The light emitting device according to the embodiment may be applied tothe light unit. The light unit has a structure in which a plurality oflight emitting devices are arrayed. The light unit may comprise adisplay device as shown in FIGS. 23 and 24 and the lighting apparatus asshown in FIG. 25.

Referring to FIG. 23, a display device 1000 according to the embodimentcomprises a light guide plate 1041, a light emitting module 1031 forsupplying the light to the light guide plate 1041, a reflective member1022 disposed below the light guide plate 1041, an optical sheet 1051disposed above the light guide plate 1041, a display panel 1061 disposedabove the optical sheet 1051, and a bottom cover 1011 for receiving thelight guide plate 1041, the light emitting module 1031, and thereflective member 1022. However, the embodiment is not limited to theabove structure.

The bottom cover 1011, the reflective sheet 1022, the light guide plate1041 and the optical sheet 1051 may constitute a light unit 1050.

The light guide plate 1041 diffuses the light to provide surface light.The light guide plate 1041 may comprise transparent material. Forexample, the light guide plate 1041 may comprise one of acryl-basedresin, such as PMMA (polymethyl methacrylate), PET (polyethyleneterephthalate), PC (polycarbonate), COC (cyclic olefin copolymer) andPEN (polyethylene naphthalate) resin.

The light emitting module 1031 supplies the light to at least one sideof the light guide plate 1041. The light emitting module 1031 serves asthe light source of the display device.

At least one light emitting module 1031 is provided to directly orindirectly supply the light from one side of the light guide plate 1041.The light emitting module 1031 may comprise a board 1033 and lightemitting devices 100 or the light emitting device package 200 accordingto the embodiment described above. The light emitting packages 200 maybe arrayed on the board 1033 while being spaced apart from each other atthe predetermined interval.

The board 1033 may be a printed circuit board (PCB) comprising a circuitpattern. In addition, the board 1033 may also comprise a metal core PCB(MCPCB) or a flexible PCB (FPCB) as well as the PCB, but the embodimentis not limited thereto. If the light emitting device packages 200 areinstalled on the lateral side of the bottom cover 1011 or on a heatdissipation plate, the board 1033 may be omitted. The heat dissipationplate may partially make contact with the top surface of the bottomcover 1011.

In addition, the light emitting device packages 200 are installed suchthat light exit surfaces of the light emitting device packages 200 arespaced apart from the light guide plate 1041 at a predetermineddistance, but the embodiment is not limited thereto. The light emittingdevice packages 200 may directly or indirectly supply the light to alight incident part, which is one side of the light guide plate 1041,but the embodiment is not limited thereto.

The reflective member 1022 may be disposed below the light guide plate1041. The reflective member 1022 reflects the light, which travelsdownward through the bottom surface of the light guide plate 1041,upward, thereby improving the brightness of the light unit 1050. Forexample, the reflective member 1022 may comprise PET, PC or PVC resin,but the embodiment is not limited thereto. The reflective member 1022may serve as the top surface of the bottom cover 1011, but theembodiment is not limited thereto.

The bottom cover 1011 may receive the light guide plate 1041, the lightemitting module 1031, and the reflective member 1022 therein. To thisend, the bottom cover 1011 has a receiving section 1012 having a boxshape with an opened top surface, but the embodiment is not limitedthereto. The bottom cover 1011 can be coupled with the top cover (notshown), but the embodiment is not limited thereto.

The bottom cover 1011 can be manufactured through a press process or anextrusion process by using metallic material or resin material. Inaddition, the bottom cover 1011 may comprise metal or non-metallicmaterial having superior thermal conductivity, but the embodiment is notlimited thereto.

The display panel 1061, for example, is an LCD panel comprising firstand second transparent substrates, which are opposite to each other, anda liquid crystal layer disposed between the first and second substrates.A polarizing plate can be attached to at least one surface of thedisplay panel 1061, but the embodiment is not limited thereto. Thedisplay panel 1061 displays information by using light passing throughthe optical sheet 1051. The display device 1000 can be applied tovarious portable terminals, monitors of notebook computers and laptopcomputers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 andthe light guide plate 1041 and comprises at least one transmissivesheet. For example, the optical sheet 1051 comprises at least one of adiffusion sheet, horizontal and vertical prism sheets, and a brightnessenhanced sheet. The diffusion sheet diffuses the incident light, thehorizontal and/or vertical prism sheet concentrates the incident lightonto a display region, and the brightness enhanced sheet improves thebrightness by reusing the light to be lost. In addition, a protectivesheet can be disposed on the display panel 1061, but the embodiment isnot limited thereto.

The light guide plate 1041 and the optical sheet 1051 can be disposed onthe optical path of the light emitting module 1031 as optical members,but the embodiment is not limited thereto.

FIG. 24 is a sectional view showing another example of a display deviceaccording to the embodiment.

Referring to FIG. 24, the display device 1100 comprises a bottom cover1152, a board 1020 on which the light emitting devices 100 are arrayed,an optical member 1154, and a display panel 1155.

The board 1020 and the light emitting devices 100 may constitute a lightemitting module 1060. In addition, the bottom cover 1152, at least onelight emitting module 1060, and the optical member 1154 may constitutethe light unit.

The bottom cover 1152 can be disposed therein with a receiving section1153, but the embodiment is not limited thereto.

In this case, the optical member 1154 may comprise at least one of alens, a light guide plate, a diffusion sheet, horizontal and verticalprism sheets, and a brightness enhanced sheet. The light guide plate maycomprise PC or PMMA (Poly methyl methacrylate). The light guide platecan be omitted. The diffusion sheet diffuses the incident light, thehorizontal and vertical prism sheets concentrate the incident light ontoa display region, and the brightness enhanced sheet improves thebrightness by reusing the light to be lost.

The optical member 1154 is disposed above the light emitting module 1060in order to convert the light emitted from the light emitting module1060 into the surface light. In addition, the optical member 1154 maydiffuse or collect the light.

FIG. 25 is a perspective view showing a lighting apparatus according tothe embodiment.

Referring to FIG. 25 the lighting apparatus according to the embodimentmay comprise a cover 2100, a light source module 2200, a radiator 2400,a power supply part 2600, an inner case 2700, and a socket 2800. Thelighting apparatus according to the embodiment may further comprise atleast one of a member 2300 and a holder 2500. The light source module2200 may comprise the light emitting device package according to theembodiment.

For example, the cover 2100 may have a blub shape or a hemisphericshape. The cover 2100 may have a hollow structure which is partiallyopen. The cover 2100 may be optically coupled with the light sourcemodule 2200. For example, the cover 2100 may diffuse, scatter, or excitelight provided from the light source module 2200. The cover 2100 may bean optical member. The cover 2100 may be coupled with the radiator 2400.The cover 2100 may comprise a coupling part which is coupled with theradiator 2400.

The cover 2100 may comprise an inner surface coated with a milk-whitepigment. The milk-white pigment may comprise a diffusion material todiffuse light. The roughness of the inner surface of the cover 2100 maybe greater than the roughness of the outer surface of the cover 2100.The surface roughness is provided for the purpose of sufficientlyscattering and diffusing the light from the light source module 2200.

The cover 2100 may comprise glass, plastic, polypropylene (PP),polyethylene (PE) or polycarbonate (PC). The polycarbonate (PC) has thesuperior light resistance, heat resistance and strength among the abovematerials. The cover 2100 may be transparent so that a user may view thelight source module 2200 from the outside, or may be opaque. The cover2100 may be formed through a blow molding scheme.

The light source module 220 may be disposed at one surface of theradiator 2400. Accordingly, the heat from the light source module 220 istransferred to the radiator 2400. The light source module 2200 maycomprise a light source 2210, a connection plate 2230, and a connector2250.

The member 2300 is disposed on a top surface of the radiator 2400, andcomprises guide recesses 2310 into which a plurality of light sources2210 and the connector 2250 are inserted. The guide recesses 2310correspond to a board of the light source 2210 and the connector 2250.

A surface of the member 2300 may be coated with a light reflectivematerial. For example, the surface of the member 2300 may be coated withwhite pigment. The member 2300 reflects again light, which is reflectedby the inner surface of the cover 2100 and is returned to the directionof the light source module 2200, to the direction of the cover 2100.Accordingly, the light efficiency of the lighting apparatus according tothe embodiment may be improved.

For example, the member 2300 may comprise an insulating material. Theconnection plate 2230 of the light source module 2200 may comprise anelectrically conductive material. Accordingly, the radiator 2400 may beelectrically connected to the connection plate 2230. The member 2300 maybe formed by an insulating material, thereby preventing the connectionplate 2230 from being electrically shorted with the radiator 2400. Theradiator 2400 receives heat from the light source module 2200 and thepower supply part 2600 and dissipates the heat.

The holder 2500 covers a receiving recess 2719 of an insulating part2710 of an inner case 2700. Accordingly, the power supply part 2600received in the insulating part 2710 of the inner case 2700 is sealed.The holder 2500 comprises a guide protrusion 2510. The guide protrusion2510 has a hole and a protrusion of the power supply part 2600 extendsby passing through the hole.

The power supply part 2600 processes or converts an electric signalreceived from the outside and provides the processed or convertedelectric signal to the light source module 2200. The power supply part2600 is received in the receiving recess 2719 of the inner case 2700,and is sealed inside the inner case 2700 by the holder 2500.

The power supply part 2600 may comprise a protrusion 2610, a guide part2630, a base 2650, and an extension part 2670.

The guide part 2630 has a shape protruding from one side of the base2650 to the outside. The guide part 2630 may be inserted into the holder2500. A plurality of components may be disposed on one surface of thebase 2650. For example, the components may comprise a DC converter toconvert AC power provided from an external power supply into DC power, adriving chip to control the driving of the light source module 2200, andan electrostatic discharge (ESD) protection device to protect the lightsource module 2200, but the embodiment is not limited thereto.

The extension part 2670 has a shape protruding from an opposite side ofthe base 2650 to the outside. The extension part 2670 is inserted intoan inside of the connection part 2750 of the inner case 2700, andreceives an electric signal from the outside. For example, a width ofthe extension part 2670 may be smaller than or equal to a width of theconnection part 2750 of the inner case 2700. First terminals of a“+electric wire” and a “−electric wire” are electrically connected tothe extension part 2670 and second terminals of the “+electric wire” andthe “−electric wire” may be electrically connected to a socket 2800

The inner case 2700 may comprise a molding part therein together withthe power supply part 2600. The molding part is prepared by hardeningmolding liquid, and the power supply part 2600 may be fixed inside theinner case 2700 by the molding part.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a lightemitting structure comprising a first conductive semiconductor layer, anactive layer under the first conductive semiconductor layer, and asecond conductive semiconductor layer adjacent the active layer; a firstelectrode electrically coupled to the first conductive semiconductorlayer; a second electrode electrically coupled to the second conductivesemiconductor layer; a channel layer at a peripheral portion of a lowerportion of the light emitting structure; a conductive support memberadjacent to the second electrode; a first connection part electricallycoupled to the first electrode and the conductive support member; and asecond connection part electrically coupled to the second electrode. 2.The light emitting device of claim 1, wherein one end of the secondconnection part is disposed on the channel layer.
 3. The light emittingdevice of claim 1, wherein one end of the second connection part isspaced apart from a sidewall of the light emitting structure and exposedto a lateral side of the light emitting structure.
 4. The light emittingdevice of claim 1, wherein the first connection part is electricallyconnected to the conductive support member through the channel layer. 5.The light emitting device of claim 1, wherein a top surface of thechannel layer is disposed higher than a top surface of the active layer.6. The light emitting device of claim 1, wherein the second electrodecomprises a metal layer under the second conductive semiconductor layer,and wherein the second connection part is electrically coupled to themetal layer.
 7. The light emitting device of claim 6, further comprisingan insulating layer provided between the metal layer and the conductivesupport member.
 8. The light emitting device of claim 7, wherein a topsurface of the insulating layer is exposed to the peripheral portion ofthe lower portion of the light emitting structure.
 9. The light emittingdevice of claim 7, wherein the first connection part is electricallycoupled to the conductive support member through the insulating layer.10. The light emitting device of claim 1, wherein the first connectionpart contacts a lateral side of the first conductive semiconductorlayer.
 11. The light emitting device of claim 1, further comprising aprotective layer provided between the first connection part and thelight emitting structure.
 12. The light emitting device of claim 1,further comprising an ohmic contact layer provided between the secondelectrode and the second conductive semiconductor layer.
 13. The lightemitting device of claim 1, wherein the channel layer surrounds theactive layer.
 14. The light emitting device of claim 1, wherein thechannel layer surrounds the second conductive semiconductor layer. 15.The light emitting device of claim 7, wherein the insulating layersurrounds the channel layer.
 16. The light emitting device of claim 1,wherein the first electrode is provided over the first conductivesemiconductor layer.
 17. The light emitting device of claim 1, whereinone lateral side of the light emitting structure is aligned at adistance of about 20 pm or less from one lateral side of the conductivesupport member.
 18. The light emitting device of claim 1, wherein onelateral side of the light emitting structure and one lateral side of theconductive support member are disposed on a same vertical plane.
 19. Alight emitting device comprising: a light emitting structure comprisinga first conductive semiconductor layer, an active layer under the firstconductive semiconductor layer, and a second conductive semiconductorlayer under the active layer; a first electrode electrically coupled tothe first conductive semiconductor layer; a second electrodeelectrically coupled to the second conductive semiconductor layer; achannel layer at a peripheral portion of a lower portion of the lightemitting structure; a conductive support member under the secondelectrode; a first connection part electrically coupled to the firstelectrode and the conductive support member; and a second connectionpart electrically coupled to the second electrode, wherein the firstconnection part makes contact with a lateral side of the firstconductive semiconductor layer, and the channel layer surrounds theactive layer.
 20. A light emitting device comprising: a light emittingstructure comprising a first conductive semiconductor layer, an activelayer under the first conductive semiconductor layer, and a secondconductive semiconductor layer under the active layer; a first electrodeelectrically coupled to the first conductive semiconductor layer; asecond electrode electrically coupled to the second conductivesemiconductor layer; a channel layer at a peripheral portion of a lowerportion of the light emitting structure; a conductive support memberunder the second electrode; a first connection part electrically coupledto the first electrode and the conductive support member; and a secondconnection part electrically coupled to the second electrode, whereinone end of the second connection part is spaced apart from a sidewall ofthe light emitting structure, and exposed to a lateral side of the lightemitting structure, and a top surface of the channel layer is providedto be higher than a top surface of the active layer.